SIGMA: Difference between revisions

Latest revision as of 10:34, 27 February 2025

SIGMA = [real]
Default: SIGMA = 0.2

Description: SIGMA specifies the width of the smearing in eV.

@@ Line 3: / Line 3: @@
 Description: {{TAG|SIGMA}} specifies the width of the smearing in eV.
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-== Related Tags and Sections ==
+== Related tags and articles ==
-{{TAG|ISMEAR}}
+{{TAG|ISMEAR}},
+{{TAG|EFERMI}},
+[[K-point integration]]
-== Example Calculations using this Tag ==
+{{sc|SIGMA|Examples|Examples that use this tag}}
-{{TAG|Bandgap of Si in GW}}, {{TAG|Bandstructure of Si in GW (VASP2WANNIER90)}}, {{TAG|Bandgap of Si using different DFT+HF methods}}, {{TAG|Beta-tin Si}}, {{TAG|Cd Si}}, {{TAG|Cd Si relaxation}}, {{TAG|Cd Si volume relaxation}}, {{TAG|CO on Ni 111 surface}}, {{TAG|Dielectric properties of Si}}, {{TAG|Dielectric properties of SiC}}, {{TAG|H2O}}, {{TAG|H2O molecular dynamics}}, {{TAG|Fcc Ni}}, {{TAG|Fcc Si}}, {{TAG|Fcc Si bandstructure}}, {{TAG|Graphite interlayer distance}}, {{TAG|Graphite MBD binding energy}}, {{TAG|Graphite TS binding energy}}, {{TAG|MgO optimum mixing}}, {{TAG|Ni 100 surface bandstructure}}, {{TAG|Ni 100 surface relaxation}}, {{TAG|Ni 111 surface high precision}}, {{TAG|O atom spinpolarized low symmetry}}, {{TAG|Si bandstructure}}, {{TAG|STM of graphene}}, {{TAG|STM of graphite}}, {{TAG|Vibrational frequencies of CO on Ni 111 surface}}
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-[[The_VASP_Manual|Contents]]
-[[Category:INCAR]]
+[[Category:INCAR tag]][[Category:Electronic minimization]][[Category:Electronic ground-state properties]]